Method for growing epitaxial layers on multiple semiconductor wafers from liquid phase

A method for simultaneously growing a plurality of single-crystal epitaxial layers of semiconductors on a plurality of suitable substrates from the liquid phase comprising the steps of,

• placing the substrates respectively in a plurality of wells which are provided in a surface of a rotatable circular lower plate,
• positioning a solution reservoir which has a solution supplying opening at the bottom on a radius of and on said lower plate surface,
• covering said lower plate except the position of said reservoir with a circular upper plate which is provided in a non-rotatable state relative to said reservoir,
• supplying small portions of liquid solution from said reservoir through said reservoir opening onto the surfaces of all said substrates by rotating said lower plate relative to said upper plate and said reservoir, and thereby constraining each of the supplied solution portions in shape and volume by the confines of said upper plate and each of said wells, and
• simultaneously growing an epitaxial layer from each of the constrained solutions on each of said substrates.