C30B 15/206
The thermal history of growing the ingot
Official title: {the thermal history of growing the ingot}
C30B15/206 (The thermal history of growing the ingot) appears on 197 US grants and 195 published applications in this corpus.
Search patents in C30B- Granted patents
- 197
- Published applications
- 195
- Assignees
- 66
- Inventors
- 409
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 8 | 0 |
| 2001 | 11 | 10 |
| 2002 | 14 | 24 |
| 2003 | 26 | 22 |
| 2004 | 14 | 11 |
| 2005 | 9 | 9 |
| 2006 | 6 | 5 |
| 2007 | 7 | 5 |
| 2008 | 4 | 7 |
| 2009 | 1 | 8 |
| 2010 | 2 | 4 |
| 2011 | 2 | 4 |
| 2012 | 7 | 1 |
| 2013 | 3 | 5 |
| 2014 | 5 | 1 |
| 2015 | 1 | 4 |
| 2016 | 3 | 8 |
| 2017 | 2 | 8 |
| 2018 | 11 | 3 |
| 2019 | 3 | 4 |
| 2020 | 1 | 9 |
| 2021 | 8 | 6 |
| 2022 | 7 | 4 |
| 2023 | 5 | 7 |
| 2024 | 6 | 11 |
| 2025 | 4 | 10 |
| 2026 | 5 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Dual refrigeration systems for a mono-crystal furnace and methods for pulling a mono-crystal1 Sep 2026US 12,723,325 B2Tcl Zhonghuan Renewable Energy Technology Co., Ltd.
- Asymmetric thermal fields for excluding impurities in single crystal manufacturing device21 Jul 2026US 12,686,941 B2Siemens Medical Solutions USA, Inc.
- Vacancy-rich silicon for use with a gallium nitride epitaxial layer23 Jun 2026US 12,662,752 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Growth method for single crystals of magnesium aluminate spinel by edge-defined film-fed growth technique5 May 2026US 12,618,170 B2Beijing Sinoma Synthetic Crystals Co., Ltd.
- Semi-insulating gallium arsenide single crystal, preparation method and growth device therefor24 Feb 2026US 12,559,856 B2Shanxi China Crystal Technologies Co., Ltd.
- Single crystal furnace, heat conduction tool, and crystal pulling control method for single crystal furnace1 Oct 2026US 2026/0297795 A1Longi Green Energy Technology Co., Ltd.
- Water-Cooling Jacket and Single Crystal Furnace1 Oct 2026US 2026/0297796 A1Xi'an Eswin Material Technology Co., Ltd.
- Vacancy-rich silicon for use with a gallium nitride epitaxial layer17 Sep 2026US 2026/0275570 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Apparatus and method for growing silicon single crystal ingot6 Aug 2026US 2026/0226650 A1SK Siltron Co., Ltd.
- Production method of monocrystalline silicon for epitaxial silicon wafer and production method of epitaxial silicon wafer18 Jun 2026US 2026/0168131 A1Sumco Corporation
Most cited
By later US patents
- Method and apparatus for growing silicon crystals70US 4,981,549 AJapan Silicon Co., Ltd. · 1991
- Low defect density vacancy dominated silicon70US 5,919,302 AMEMC Electronic Materials, Inc. · 1999
- Apparatus for growing silicon crystals65US 5,264,189 AMitsubishi Materials Corporation · 1993
- Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same63US 5,968,264 AShin-Etsu Handotai Co., Ltd. · 1999
- Manufacturing method of a silicon wafer having a controlled BMD concentration55US 5,788,763 AToshiba Ceramics Co., Ltd. · 1998