Asymmetric thermal fields for excluding impurities in single crystal manufacturing device

A furnace, comprising:

• a cylindrical furnace wall defining a furnace central axis;
• an induction coil disposed within the cylindrical furnace wall, the induction coil defining a coil central axis;
• a quartz tube disposed within the induction coil, the quartz tubing defining a quartz central axis;
• a refractory lining disposed within the quartz tube, the refractory lining defining a lining central axis, wherein at least one of the coil central axis, the quartz central axis and the lining central axis is placed at an eccentric location with respect to the furnace central axis of the cylindrical furnace;
• a crucible disposed within the refractory lining, the crucible including a melt therein
• wherein the eccentric location of at least one of the coil central axis, the quartz central axis and the lining central axis with respect to the furnace central axis creates a thermal gradient that causes a location in the melt at which the melt descends to the bottom of the crucible via convection to be away from the furnace central axis;
• and
• a rod configured to draw a crystal from the melt at the furnace central axis to grow the crystal.