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AssigneesMitsubishi Kinzoku Kabushiki Kaisha, Japan Silicon Co., Ltd.
InventorsIchiro Yamashita, Koutaro Shimizu, Yoshiaki Banba, Yasushi Shimanuki, Akira Higuchi, Hisashi Furuya
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A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.
In the method of growing silicon single-crystals by the Czochralski technique which comprises the steps of immersing a seed crystal in a silicon melt and pulling said seed crystal from said melt to thereby grow a silicon single-crystal, the improvement which comprises:
Dependencies are inferred from the claim text.