C23F 1/18
For etching copper or alloys thereof
Official title: for etching copper or alloys thereof
C23F1/18 (For etching copper or alloys thereof) appears on 369 US grants and 401 published applications in this corpus.
Search patents in C23F- Granted patents
- 369
- Published applications
- 401
- Assignees
- 240
- Inventors
- 981
- Latest grant
- 30 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 9 | 0 |
| 2001 | 6 | 2 |
| 2002 | 8 | 17 |
| 2003 | 18 | 11 |
| 2004 | 16 | 23 |
| 2005 | 5 | 16 |
| 2006 | 8 | 11 |
| 2007 | 9 | 11 |
| 2008 | 11 | 10 |
| 2009 | 5 | 10 |
| 2010 | 7 | 19 |
| 2011 | 8 | 13 |
| 2012 | 14 | 17 |
| 2013 | 15 | 21 |
| 2014 | 12 | 25 |
| 2015 | 27 | 28 |
| 2016 | 25 | 23 |
| 2017 | 8 | 21 |
| 2018 | 16 | 16 |
| 2019 | 16 | 13 |
| 2020 | 9 | 12 |
| 2021 | 15 | 21 |
| 2022 | 16 | 16 |
| 2023 | 7 | 13 |
| 2024 | 9 | 12 |
| 2025 | 7 | 11 |
| 2026 | 4 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing ceramic circuit board30 Jun 2026US 12,667,900 B2Niterra Materials Co., Ltd.
- Roughening solution for rolled copper foil and method for producing roughened copper foil19 May 2026US 12,630,931 B2Mitsubishi Gas Chemical Company, Inc.
- Etchant composition7 Apr 2026US 12,595,568 B2Kao Corporation
- CMP slurry composition for polishing copper and copper film polishing method using the same3 Feb 2026US 12,540,256 B2Samsung SDI.Co., Ltd.
- Copper etching solution23 Dec 2025US 12,503,775 B2C. Uyemura & Co., Ltd.
- Etchant composition16 Jul 2026US 2026/0201569 A1Kao Corporation
- Composition for selectively removing oxide compounds and etching residues of one or both of co and cu16 Jul 2026US 2026/0201570 A1BASF SE
- Etchant composition, method of patterning metal layer and method of producing electronic device using the same2 Jul 2026US 2026/0184991 A1Dongwoo Fine-Chem Co., Ltd.
- Composition, method of treating metal-containing layer, and method of manufacturing semiconductor device4 Jun 2026US 2026/0152687 A1Samsung Electronics Co., Ltd.
- Composition, method of treating metal-containing layer by using the same, and method of manufacturing semiconductor device by using the same9 Apr 2026US 2026/0098346 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Low temperature system and method for CVD copper removal383US 5,897,379 ASharp Kabushiki Kaisha · 1999
- Method for forming solder bumps in semiconductor devices143US 5,508,229 ANational Semiconductor Corporation · 1996
- Process for manufacturing a printed wiring board107US 6,775,907 B1International Business Machines Corporation · 2004
- Process for improving the adhesion of polymeric materials to metal surfaces90US 5,869,130 AMac Dermid, Incorporated · 1999
- Microelectronic assembly from processed substrate71US 11,367,652 B2Invensas Bonding Technologies, Inc. · 2022