Composition for selectively removing oxide compounds and etching residues of one or both of co and cu

A composition for selectively removing oxide compounds and etching residues of one or both of Co and Cu in the presence of one or more metals selected from the group consisting of Co, Cu, W, Ru, and Mos said composition comprising

• (A) one or both of 1H-benzatriazole and 5-methyl-1H-benzotriazole, wherein a total amount of 1H-benzatriazole and 5-methyl-1H-benzotriazole is in a range of from 0.5% to 5%;
• (B) one or both of histidine and chlorhexidine, wherein a total amount of histidine and chlorhexidine is in a range of from 500 ppm to 2000 ppm;
• (C) one or both of lactic acid and glycolic acid wherein a total amount of lactic acid and glycolic acid is in a range of from 0.01% to 0.1%;
• (D) one or both of N-formyl-morpholine and dimethylsulfoxide wherein a total amount of N-formyl-morpholine and dimethylsulfoxide is in a range of from 5% to 20%;
• and
• (E) water,
• in each case based on the sum of the masses of constituents (A), (B), (C), (D) and (E),
• wherein a total concentration of compounds comprising a fluorine-containing anion is 0.0008 wt % or less based on the total mass of the composition, and
• wherein said composition having has a pH value of less than 6.