CMP slurry composition for polishing copper and copper film polishing method using the same

A chemical mechanical polishing (CMP) slurry composition for polishing copper, the CMP slurry composition comprising:

• a solvent;
• an abrasive agent;
• and
• a compound including a structural unit represented by Formula 1 or a compound including a structural unit represented by Formula 2,
• wherein, in Formula 1,
• * is a linking site,
• R1, R2, R3, and R4 are each independently a single bond or a C1 to C5 alkylene group,
• M1, M2, M3, and M4 are each independently OH or O−Z+, Z+ being a monovalent cation, and
• a, b, c, and d are each independently 0 to 30, and a+b+c+d is not equal to 0;
• wherein, in Formula 2,
• * is a linking site,
• R5, R6, R7, and R8 are each independently a C1 to C5 alkylene group,
• M5 and M6 are each independently OH or O−Z+, Z+ being a monovalent cation, and
• a and b are each independently 0 to 30, and a+b is not equal to 0,
• wherein the compound including a structural unit represented by Formula 1 or the compound including a structural unit represented by Formula 2 has a weight average molecular weight of 1,000 g/mol to 5,000 g/mol,
• wherein the CMP slurry composition includes:
• 0.001 wt % to 20 wt % of the abrasive agent, wherein the abrasive agent is silica,
• 0.0001 wt % to 2 wt % of the compound including a structural unit represented by Formula 1 or the compound including a structural unit represented by Formula 2,
• 0.001 wt % to 5 wt % of a corrosion inhibitor, wherein the corrosion inhibitor is a triazole compound,
• 0.01 wt % to 20 wt % of a chelating agent,
• 0.1 wt % to 5 wt % of an oxidant, and
• a balance of the solvent, all wt % being based on a total weight of the CMP slurry composition.