Sharp Microelectronics Technology, Inc.
Camas, WA, US· latest recorded location
Sharp Microelectronics Technology, Inc. is named on 68 US grants and 0 published applications in this corpus. Its most frequent classification is H10P (Generic processes or apparatus for the manufacture or treatment of devices covered).
- Granted patents
- 68
- Published applications
- 0
- Inventors
- 56
- Granted in 2026 so far
- 0
- Most recent grant
- 4 Sep 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 6 | 0 |
| 1995 | 10 | 0 |
| 1996 | 5 | 0 |
| 1997 | 9 | 0 |
| 1998 | 24 | 0 |
| 1999 | 13 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
By publication year.
Technology areas
Share of 68 documents
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered23
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by18
- H10DInorganic electric semiconductor devices14
- G06FComputing and data processing8
- G03FPhotomechanical production of textured or patterned surfaces7
- Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7
- H04WWireless communication networks6
- C23CCoating metallic material4
- G02FOptical devices or arrangements for the control of light by modification of3
- G11CStatic stores3
Recent patents
- Adhesion promotion method for electro-chemical copper metallization in IC applications4 Sep 2001US 6,284,652 B1
- MOS transistor with controlled shallow source/drain junction, source/drain strap portions, and source/drain electrodes on field insulation layers3 Aug 1999US 5,932,913 A
- Method for a chemical vapor deposition of copper on an ion prepared conductive surface29 Jun 1999US 5,918,150 A
- Method for manufacturing a CMOS self-aligned strapped interconnection22 Jun 1999US 5,915,199 A
- Oxidized diffusion barrier surface for the adherence of copper and method for same15 Jun 1999US 5,913,144 A
No published applications.
Most cited
By later US patents
- Low temperature system and method for CVD copper removal383US 5,897,379 A1999
- Low resistance contact between integrated circuit metal levels and method for same217US 5,904,565 A1999
- Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant195US 5,792,679 A1998
- Apparatus and method for locating mobile and portable radio terminals in a radio network149US 5,293,645 A1994
- Method for manufacturing a CMOS self-aligned strapped interconnection113US 5,915,199 A1999