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AssigneesAdvanced Technology Materials, Inc., Sharp Microelectronics Technology, Inc.
InventorsLawrence J. Charneski, Tuc Nguyen, Gautam Bhandari
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A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method includes depositing a first seed layer of copper on the barrier material by chemical vapor deposition (CVD) using (hfac)Cu(1,5-Dimethylcyclooctadiene) precursor. Following the deposition of the seed layer, which strongly adheres and conforms to the copper receiving surfaces on the diffusion barrier, the wafer substrate is positioned in an electro-chemical deposition apparatus, such as an electroplating or electroless plating bath. A second layer of copper is then deposited on the seed layer by means of electrochemical deposition, e.g., electroplating or electroless plating. The second layer of copper deposited by electro-chemical deposition is a “fill” or “bulk” layer, substantially thicker than the seed layer. The method provides good adhesion between the copper and barrier material because the seed layer deposited by (hfac)Cu(1,5-Dimethylcyclooctadiene) strongly adheres and conforms to barrier material and the electroplated or electroless plated copper strongly adheres to the copper seed layer.
In integrated circuit fabrication, a method of applying copper to a barrier material substrate, the method comprising the following steps:
A method of applying copper to selected regions of an integrated circuit, the method comprising the following steps:
A method of electroplating copper onto selected copper-receiving surfaces of a substrate, the copper-receiving surfaces initially having diffusion barrier material formed thereon, the method comprising:
A method of electrolessly plating copper onto selected copper-receiving surfaces of a substrate the copper-receiving surfaces initially having diffusion barrier material formed thereon, the method comprising:
Dependencies are inferred from the claim text.