Maxchip Electronics Corp.
Hsinchu City, TW· latest recorded location
Maxchip Electronics Corp. is named on 10 US grants and 17 published applications in this corpus. Its most frequent classification is H10D (Inorganic electric semiconductor devices).
- Granted patents
- 10
- Published applications
- 17
- Inventors
- 28
- Granted in 2026 so far
- 0
- Most recent grant
- 28 Jun 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 1 |
| 2011 | 0 | 3 |
| 2012 | 2 | 4 |
| 2013 | 2 | 1 |
| 2014 | 2 | 2 |
| 2015 | 3 | 4 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
By publication year.
Technology areas
Share of 27 documents
- H10DInorganic electric semiconductor devices11
- H10BElectronic memory devices7
- H10FSolar cells and light sensors6
- B81BMicrostructural devices or systems4
- B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural4
- G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of4
- G01BMeasuring length, thickness or similar linear dimensions2
- G03BApparatus or arrangements for taking photographs or for projecting or viewing them2
- G03FPhotomechanical production of textured or patterned surfaces2
- H03KPulse technique2
Recent patents
- High voltage bootstrap gate driving apparatus28 Jun 2016US 9,379,696 B2
- Light sensor22 Sep 2015US 9,142,583 B2
- Multi-wave band light sensor combined with function of IR sensing and method of fabricating the same15 Sep 2015US 9,136,301 B2
- Method of forming semiconductor structure17 Mar 2015US 8,980,703 B2
- Semiconductor structure9 Dec 2014US 8,907,395 B2
- Electrostatic discharge protection device15 Aug 2019US 2019/0252369 A1
- Trench lateral diffusion metal oxide semiconductor device and manufacturing method of the same21 Jul 2016US 2016/0211348 A1
- Semiconductor structure and method of forming the same19 Nov 2015US 2015/0333140 A1
- High voltage bootstrap gate driving apparatus29 Oct 2015US 2015/0311891 A1
- Light sensor2 Apr 2015US 2015/0091123 A1
Most cited
By later US patents
- Semiconductor structure6US 8,907,395 B22014
- Ambit light sensor with function of IR sensing3US 8,558,177 B22013
- Method of forming semiconductor structure2US 8,895,386 B22014
- Method of forming semiconductor structure2US 8,980,703 B22015
- Multi-wave band light sensor combined with function of IR sensing and method of fabricating the same2US 9,136,301 B22015