Trench lateral diffusion metal oxide semiconductor device and manufacturing method of the same

A trench LDMOS device, disposed on a substrate, comprising:

• a transistor, disposed on a first area of the substrate, the transistor comprising a gate;
• and
• a trench LDMOS transistor, disposed on a second area of the substrate, comprising:
• a first well region, disposed in the second area of the substrate;
• a second well region, having a first conductivity type, disposed in the first well region;
• a trench gate, disposed in a trench of the substrate, wherein the trench gate protrudes from a surface of the substrate, and the trench is located in the second well region;
• a gate dielectric layer, disposed between the trench gate and the substrate;
• a first doped region, having the first conductivity type, disposed in the substrate at two sides of the trench gate;
• and
• a second doped region, having a second conductivity type, disposed in the substrate between the trench gate and the first doped region.