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US 2015/0091123 A1Published application
Light sensor
AssigneeMaxchip Electronics Corp.
InventorsJin-Wei Chang, Hung-Lung Wang, Jung-Kai Hung, Wei-Chi Su
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Abstract
Provided is a light sensor including a substrate, a dielectric layer, a plurality of pixels, a plurality of spacers, and a plurality of metal interconnects. The dielectric layer is located on the substrate. The pixels are located in the dielectric layer. The spacers are located on the sidewall of openings between adjacent pixels. The metal interconnects are located in the openings and cover the spacers so as to be electrically connected to the corresponding pixels.
Claims20
A light sensor, comprising:
- a substrate;
- a dielectric layer located on the substrate;
- a plurality of pixels located in the dielectric layer, wherein an opening is located between any two adjacent pixels;
- a plurality of spacers, each of the spacers being located on a sidewall of the opening between the corresponding pixels;
- and
- a plurality of first metal interconnects, each of the first metal interconnects being located in the corresponding opening and covering the corresponding spacers so as to be electrically connected to the corresponding pixel.
3 more elements
A multi-wave band light sensor, comprising:
- a substrate;
- a dielectric layer located on the substrate;
- a plurality of first wave band light sensors located on the dielectric layer, wherein a first opening is located between any two adjacent first wave band light sensors;
- a plurality of first spacers respectively located on sidewalls of the first openings;
- a plurality of first metal interconnects respectively located in the first openings and respectively electrically connected to the first wave band light sensors;
- a plurality of second wave band light sensors located in the dielectric layer, wherein a second opening is located between any two adjacent second wave band light sensors, and each of the first wave band light sensors and each of the second wave band light sensors comprise:
- a lower electrode;
- a hydrogenated amorphous silicon layer covering the corresponding lower electrode;
- and
- a transparent upper electrode covering the corresponding hydrogenated amorphous silicon layer;
- a plurality of second spacers respectively located on sidewalls of the second openings;
- a plurality of second metal interconnects respectively located in the second openings and respectively electrically connected to the second wave band light sensors;
- a plurality of third wave band light sensors located in the substrate, wherein at least a portion of each of the second wave band light sensors is located between the corresponding third wave band light sensors and the corresponding first wave band light sensors and is overlapped with the corresponding third wave band light sensors and the corresponding first wave band light sensors;
- and
- a protective layer located on the first wave band light sensors.
12 more elements
Dependencies are inferred from the claim text.