Semiconductor structure and method of forming the same
AssigneeMaxchip Electronics Corp.
InventorKosuke Yoshida
Life of this patent
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Abstract
A semiconductor structure is provided. An N-type epitaxial layer is disposed on an N-type substrate. The N-type epitaxial layer has at least one trench therein, wherein the trench has a straight sidewall. A first insulating layer is disposed on at least a portion of a surface of the trench. A silicon-containing layer is disposed in a lower portion of the trench and has at least one air gap therein. A first conductive layer is disposed in an upper portion of the trench. Two P-type well regions are disposed in the N-type epitaxial layer beside the trench. Two N-type source regions are respectively disposed in the P-type well regions beside the trench.
Claims20
A semiconductor structure, comprising:
- a substrate of a first conductivity type;
- an epitaxial layer of the first conductivity type, disposed on the substrate and having at least one trench therein, wherein the trench has a straight sidewall;
- a first insulating layer, disposed on at least a portion of a surface of the trench;
- a silicon-containing layer, disposed in a lower portion of the trench and having at least one air gap therein;
- a first conductive layer, disposed in an upper portion of the trench;
- two well regions of a second conductivity type, disposed in the epitaxial layer beside the trench;
- and
- two source regions of the first conductivity type, respectively disposed in the well regions beside the trench.
The method of forming a semiconductor device, comprising:
- forming an epitaxial layer of a first conductivity type on a substrate of the first conductivity type;
- forming at least one trench in the epitaxial layer, wherein the trench has a straight sidewall;
- forming a first insulating layer at least on a portion of a surface of the trench;
- forming a silicon-containing layer in a lower portion of the trench, wherein the silicon-containing layer has at least one air gap therein;
- forming a first conductive layer in an upper portion of the trench;
- forming two well regions of a second conductivity type in the epitaxial layer beside the trench;
- and
- forming two source regions of the first conductivity type respectively in the well regions beside the trench.
Dependencies are inferred from the claim text.