Y10S 977/763
Formed along or from crystallographic terraces or ridges
Official title: formed along or from crystallographic terraces or ridges
Y10S977/763 (Formed along or from crystallographic terraces or ridges) appears on 46 US grants and 45 published applications in this corpus.
Search patents in Y10S- Granted patents
- 46
- Published applications
- 45
- Assignees
- 30
- Inventors
- 82
- Latest grant
- 30 Jan 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 4 |
| 2003 | 2 | 2 |
| 2004 | 0 | 2 |
| 2005 | 2 | 4 |
| 2006 | 4 | 6 |
| 2007 | 3 | 4 |
| 2008 | 4 | 8 |
| 2009 | 4 | 4 |
| 2010 | 6 | 4 |
| 2011 | 5 | 2 |
| 2012 | 4 | 1 |
| 2013 | 1 | 1 |
| 2014 | 2 | 1 |
| 2015 | 1 | 2 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
| 2018 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods of fabricating nanostructures and nanowires and devices fabricated therefrom30 Jan 2018US 9,881,999 B2The Regents of the University of California
- Nanostructures and methods for manufacturing the same13 Jun 2017US 9,680,039 B2QuNano AB
- Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication13 Jan 2015US 8,932,940 B2The Regents of the University of California
- Nanowires, nanowire fielde-effect transistors and fabrication method16 Dec 2014US 8,912,545 B2Semiconductor Manufacturing International Corp.
- Nanostructures and methods for manufacturing the same8 Jul 2014US 8,772,626 B2QuNano AB
- Nanowires and nanowire fielde-effect transistors5 Mar 2015US 2015/0060767 A1Semiconductor Manufacturing International Corp.
- Nanostructures and Methods for Manufacturing the Same29 Jan 2015US 2015/0027523 A1QuNano AB
- Nanowires, nanowire fielde-effect transistors and fabrication method5 Jun 2014US 2014/0151705 A1Semiconductor Manufacturing International Corp.
- Nanostructures and methods for manufacturing the same13 Jun 2013US 2013/0146835 A1QuNano AB
- Phase-change random access memory devices and methods of manufacturing the same16 Aug 2012US 2012/0205607 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Nanowires, nanostructures and devices fabricated therefrom394US 6,882,051 B2The Regents of the University of California · 2005
- Methods of fabricating nanostructures and nanowires and devices fabricated therefrom247US 6,996,147 B2The Regents of the University of California · 2006
- Flash memory with nanocrystalline silicon film floating gate137US 5,852,306 AMicron Technology, Inc. · 1998
- Nanostructures and methods for manufacturing the same130US 7,335,908 B2QuNano AB · 2008
- System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler60US 7,109,581 B2Nanoconduction, Inc. · 2006