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US 7,335,908 B2Granted
Nanostructures and methods for manufacturing the same
AssigneeQuNano AB
InventorsLars Ivar Samuelson, Bjorn Jonas Ohlsson
Life of this patent
Estimating the term…
Abstract
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.
Claims63
A nanowhisker comprising:
- a column with a diameter of nanometer dimension,
- the column including along its length at least first and second lengthwise segments of different crystalline materials with a composition boundary between the first and second segments, wherein said diameter of said column is such that lattice strain caused by lattice mismatch at the composition boundary is substantially accommodated by lateral outward atomic displacement and wherein the composition boundary between the crystalline materials of the first and second segments extends over an axial interval of not more than 10 diametral lattice planes.
A nanowhisker comprising:
- a column with a diameter of nanometer dimension,
- the column including along its length at least first and second lengthwise segments of different crystalline materials with a diametral material boundary between the first and second segments, said material boundary defined by a transition between said different crystalline materials occurring within an axial interval of not more than ten diametral lattice planes.
A nanowhisker comprising,
- a column having a longitudinal axis, said column having a length along said axis and at least one dimension perpendicular to said axis, said dimension perpendicular to said axis not exceeding about 500 nm;
- said column comprising at least:
- a first lengthwise segment of a first crystalline semiconductor material having a first composition;
- and
- a second lengthwise segment of a second crystalline semiconductor material having a second composition,
- said first lengthwise segment and said second lengthwise segment being in contact at an interface,
- said interface constituting a junction at which said first composition changes to said second composition within an axial distance of not greater than 10 diametral lattice planes.
4 more elements
A nanowhisker comprising,
- a column having a longitudinal axis, said column having a length along said axis and at least one dimension perpendicular to said axis;
- said column comprising at least:
- a first lengthwise segment of a first crystalline semiconductor material having a first composition and a first crystal lattice;
- and
- a second lengthwise segment of a second crystalline semiconductor material having a second composition and a second crystal lattice,
- said first lengthwise segment and said second lengthwise segment being in contact at an interface, said interface constituting a junction at which said first composition changes to said second composition within an axial distance of not greater than 10 diametral lattice planes.
- said dimension perpendicular to said axis being such that lattice strain caused by lattice mismatch between said first crystal lattice and said second crystal lattice at said interface between said first lengthwise segment and said second lengthwise segment can be substantially accommodated by lateral atomic displacement.
4 more elements
Dependencies are inferred from the claim text.