Nanowires, nanowire fielde-effect transistors and fabrication method
AssigneeSemiconductor Manufacturing International Corp.
InventorsDeyuan Xiao, James Hong
Life of this patent
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Abstract
A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.
Claims14
A method for fabricating a nanowire-based semiconductor structure, comprising:
- forming a first nanowire with a first polygon-shaped cross-section having a first number of sides;
- forming a second nanowire by depositing a semiconductor layer directly on all surface of the first nanowire, such that the semiconductor layer of the second nanowire has a second polygon-shaped cross-section containing the first polygon-shaped cross-section of the first nanowire, the second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number;
- and
- forming a third nanowire by annealing the second nanowire, comprising the semiconductor layer and the first nanowire, to remove a substantial number of vertexes of the second polygon-shaped cross-section, wherein the third nanowire has a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.
Dependencies are inferred from the claim text.