Nanowires, nanowire fielde-effect transistors and fabrication method
AssigneeSemiconductor Manufacturing International Corp.
InventorsDEYUAN XIAO, JAMES HONG
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Abstract
A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.
Claims20
A method for fabricating a nanowire-based semiconductor structure, comprising:
- forming a first nanowire with a first polygon-shaped cross-section having a first number of sides;
- forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number;
- and
- annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.
The method according to claim 4, wherein:
- the nanowire has a circular cross-section, or an elliptical cross-section, or a “Ω” shape cross-section
A nanowire field-effect transistor, comprising:
- a first semiconductor substrate;
- a buried layer on the first semiconductor substrate;
- a nanowire suspended on the buried layer;
- a gate structure covering the nanowire;
- and
- a source and a drain connecting with the nanowire,
- wherein:
- the nanowire is formed by sequentially:
- forming a second semiconductor substrate on the buried layer;
- forming a first nanowire with a square cross-section or a rectangular cross-section, a source region, and a drain region by etching the second semiconductor substrate;
- removing the buried layer underneath the first nanowire;
- forming a semiconductor layer on the first nanowire;
- and annealing the first nanowire and the semiconductor layer.
Dependencies are inferred from the claim text.