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US 2012/0205607 A1Published application
Phase-change random access memory devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorTae-Yon LEE
Life of this patent
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Abstract
A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.
Claims12
A phase-change random access memory (PRAM) device, comprising:
- a lower electrode;
- a phase-change nanowire electrically connected to the lower electrode, the phase-change nanowire including a single element;
- and
- an upper electrode electrically connected to the phase-change nanowire.
1 more element
Dependencies are inferred from the claim text.