Y10S 438/978
Forming tapered edges on substrate or adjacent layers
Official title: forming tapered edges on substrate or adjacent layers
Y10S438/978 (Forming tapered edges on substrate or adjacent layers) appears on 383 US grants and 108 published applications in this corpus.
Search patents in Y10S- Granted patents
- 383
- Published applications
- 108
- Assignees
- 144
- Inventors
- 592
- Latest grant
- 19 Mar 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 7 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 6 | 0 |
| 1982 | 4 | 0 |
| 1983 | 9 | 0 |
| 1984 | 8 | 0 |
| 1985 | 7 | 0 |
| 1986 | 4 | 0 |
| 1987 | 14 | 0 |
| 1988 | 5 | 0 |
| 1989 | 8 | 0 |
| 1990 | 8 | 0 |
| 1991 | 14 | 0 |
| 1992 | 8 | 0 |
| 1993 | 11 | 0 |
| 1994 | 20 | 0 |
| 1995 | 15 | 0 |
| 1996 | 17 | 0 |
| 1997 | 22 | 0 |
| 1998 | 18 | 0 |
| 1999 | 25 | 0 |
| 2000 | 13 | 0 |
| 2001 | 17 | 11 |
| 2002 | 14 | 18 |
| 2003 | 16 | 14 |
| 2004 | 12 | 19 |
| 2005 | 13 | 9 |
| 2006 | 12 | 15 |
| 2007 | 7 | 2 |
| 2008 | 7 | 5 |
| 2009 | 9 | 3 |
| 2010 | 8 | 3 |
| 2011 | 3 | 1 |
| 2012 | 1 | 1 |
| 2013 | 1 | 3 |
| 2014 | 3 | 2 |
| 2015 | 2 | 0 |
| 2016 | 0 | 1 |
| 2017 | 1 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Nonplanar device with thinned lower body portion and method of fabrication19 Mar 2019US 10,236,356 B2Intel Corporation
- Nonplanar device with thinned lower body portion and method of fabrication22 Aug 2017US 9,741,809 B2Intel Corporation
- Nonplanar device with thinned lower body portion and method of fabrication17 Nov 2015US 9,190,518 B2Intel Corporation
- GaN vertical superjunction device structures and fabrication methods12 May 2015US 9,029,210 B2Avogy, Inc.
- Via structure and via etching process of forming the same25 Nov 2014US 8,896,127 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Nonplanar device with thinned lower body portion and method of fabrication21 Dec 2017US 2017/0365677 A1Intel Corporation
- Nonplanar device with thinned lower body portion and method of fabrication7 Jan 2016US 2016/0005829 A1Intel Corporation
- Gan vertical superjunction device structures and fabrication methods2 Oct 2014US 2014/0295652 A1Avogy, Inc.
- Nonplanar device with thinned lower body portion and method of fabrication28 Aug 2014US 2014/0239358 A1Intel Corporation
- Gan vertical superjunction device structures and fabrication methods26 Dec 2013US 2013/0341677 A1Avogy, Inc.
Most cited
By later US patents
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features257US 6,908,862 B2APPLIED Materials.Inc. · 2005
- Method for fabricating semiconductor devices having an HDP-CVD oxide layer as a passivation layer245US 6,087,278 AHyundai Electronics Industries Co., Ltd. · 2000
- Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability236US 5,326,428 AMicron Semiconductor, Inc. · 1994
- Method and apparatus for fabricating self-assembling microstructures172US 6,864,570 B2The Regents of the University of California · 2005