Method for fabricating semiconductor devices having an HDP-CVD oxide layer as a passivation layer
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsSun Oo Kim, Han Min Kim
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Abstract
There is provided a method for fabricating a semiconductor device, by which passivation layers are formed with good step coverage to prevent crack or void from being occurred in high aspect ratio of metallization layers and the time for performing the processes can be decreased to enhance the productability and the yield of the device. The method is performed as follows. Over a substrate having completed metallization layers, an oxide layer is formed as a first passivation layer by high-density plasma chemical vapor deposition (HDP-CVD). On the HDP-CVD oxide layer, a nitride layer is formed as a second passivation layer by plasma enhanced chemical vapor deposition (PECVD) or HDP-CVD.
Claims16
A method for fabricating a semiconductor device which comprises the steps of:
- preparing a substrate with completion of metallization;
- forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-CVD);
- and
- forming a nitride layer as a second passivation layer on the oxide layer by plasma enhanced chemical vapor deposition (PECVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
A method for fabricating a semiconductor device which comprises the steps of:
- preparing a substrate with completion of metallization;
- forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-DVD);
- and
- forming a nitride layer as a second passivation layer on the oxide layer by high density plasma chemical vapor deposition (HDP-CVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
A method for fabricating a semiconductor device which comprises the steps of:
- preparing a substrate with completion of metallization;
- forming an oxide layer as a first passivation layer over the substrate by high density plasma chemical vapor deposition (HDP-CVD);
- and
- forming an oxy-nitride layer as a second passivation layer on the oxide layer by plasma enhanced chemical vapor deposition (PECVD), wherein the nitride layer is formed in-situ without breaking vacuum after the oxide is formed.
Dependencies are inferred from the claim text.