Y10S 438/933
Germanium or silicon or ge-si on iii-v
Official title: Germanium or silicon or Ge-Si on III-V
Y10S438/933 (Germanium or silicon or ge-si on iii-v) appears on 444 US grants and 269 published applications in this corpus.
Search patents in Y10S- Granted patents
- 444
- Published applications
- 269
- Assignees
- 153
- Inventors
- 619
- Latest grant
- 6 Feb 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 11 | 0 |
| 1990 | 13 | 0 |
| 1991 | 8 | 0 |
| 1992 | 10 | 0 |
| 1993 | 15 | 0 |
| 1994 | 10 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 2 | 0 |
| 1998 | 10 | 0 |
| 1999 | 6 | 0 |
| 2000 | 7 | 0 |
| 2001 | 11 | 5 |
| 2002 | 16 | 27 |
| 2003 | 22 | 32 |
| 2004 | 39 | 31 |
| 2005 | 39 | 46 |
| 2006 | 28 | 33 |
| 2007 | 31 | 22 |
| 2008 | 19 | 18 |
| 2009 | 22 | 17 |
| 2010 | 19 | 11 |
| 2011 | 24 | 10 |
| 2012 | 14 | 6 |
| 2013 | 3 | 2 |
| 2014 | 4 | 5 |
| 2015 | 4 | 2 |
| 2016 | 1 | 2 |
| 2017 | 1 | 0 |
| 2018 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Silicon germanium source/drain regions6 Feb 2018US 9,887,290 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for improving transistor performance through reducing the salicide interface resistance23 Jan 2018US 9,876,113 B2Intel Corporation
- Method for improving transistor performance through reducing the salicide interface resistance13 Jun 2017US 9,680,016 B2Intel Corporation
- Method for improving transistor performance through reducing the salicide interface resistance6 Sep 2016US 9,437,710 B2Intel Corporation
- Method for improving transistor performance through reducing the salicide interface resistance1 Dec 2015US 9,202,889 B2Intel Corporation
- Method for improving transistor performance through reducing the salicide interface resistance17 Nov 2016US 2016/0336446 A1Intel Corporation
- Method for improving transistor performance through reducing the salicide interface resistance17 Nov 2016US 2016/0336447 A1Intel Corporation
- In-Situ Doping of Arsenic for Source and Drain Epitaxy21 May 2015US 2015/0137198 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for improving transistor performance through reducing the salicide interface resistance23 Apr 2015US 2015/0108546 A1lntel Corporation
- Method of manufacturing semiconductor device25 Sep 2014US 2014/0287569 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- In-situ doping of arsenic for source and drain epitaxy548US 8,962,400 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Method for fabricating a semiconductor device and a substrate processing apparatus384US 6,686,281 B2Hitachi Kokusai Electric Inc. · 2004
- Monolithically integrated light emitting devices262US 7,535,089 B2Massachusetts Institute of Technology · 2009
- Process for deposition of semiconductor films239US 6,821,825 B2ASM America, Inc. · 2004