Y10S 438/912
Displacing pn junction
Y10S438/912 (Displacing pn junction) appears on 15 US grants and 7 published applications in this corpus.
Search patents in Y10S- Granted patents
- 15
- Published applications
- 7
- Assignees
- 11
- Inventors
- 28
- Latest grant
- 22 Feb 2011
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 3 |
| 2004 | 1 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 1 | 1 |
| 2010 | 1 | 1 |
| 2011 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor superjunction structure22 Feb 2011US 7,893,491 B2Freescale Semiconductor, Inc.
- Reduced-crosstalk wirebonding in an optical communication system18 Jan 2011US 7,872,325 B2Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- Strained semiconductor power device and method26 Jan 2010US 7,651,918 B2Freescale Semiconductor, Inc.
- Semiconductor superjunction structure31 Mar 2009US 7,510,938 B2Freescale Semiconductor, Inc.
- Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same22 Feb 2005US 6,858,510 B2General Semiconductor, Inc.
- Reduced-crosstalk wirebonding in an optical communication system26 Aug 2010US 2010/0213566 A1Avago Technologies Fiber IP (Singapore) Pte. Ltd.
- Semiconductor superjunction structure14 May 2009US 2009/0121257 A1Freescale Semiconductor, Inc.
- Semiconductor superjunction structure28 Feb 2008US 2008/0048175 A1Freescale Semiconductor, Inc.
- Strained semiconductor power device and method28 Feb 2008US 2008/0048257 A1Freescale Semiconductor, Inc.
- Low- voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same6 Nov 2003US 2003/0205775 A1General Semiconductor, Inc.
Most cited
By later US patents
- Ballistic heterojunction bipolar transistor16US 4,728,616 ACornell Research Foundation, Inc. · 1988
- Inverted heterojunction photodiode15US 4,183,035 ARockwell International Corporation · 1980
- GaAs-GaAlAs solar cells13US 4,163,987 AHughes Aircraft Company · 1979
- Amorphous semiconductor solar cell13US 4,251,287 AUniversity of Delaware · 1981
- Method for forming zener diode with high time stability and low noise13US 5,756,387 ASGS-Thomson Microelectronics S.A. · 1998