Semiconductor superjunction structure
AssigneeFreescale Semiconductor, Inc.
InventorEdouard D. deFresart
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Abstract
Embodiments of semiconductor structures are provided for a semiconductor device employing a superjunction structure. The device includes interleaved regions of first and second semiconductor materials of, respectively, first and second conductivity types and first and second mobilities. The second conductivity type is opposite the first conductivity type and the second mobility exceeds the first mobility for a first carrier type. The first and second semiconductor materials are separated by substantially parallel PN junctions and form a superjunction structure. The device also includes electrical contacts coupled to the first and second materials so that, in response to applied signals, a principal current of the first carrier type flows through the second material.
Claims18
A semiconductor device, comprising:
- first spaced-apart regions of a first semiconductor material having a first conductivity type and a first lattice constant;
- second spaced-apart regions of a second semiconductor material interleaved with the first space-apart regions, and having a second different conductivity type and a second different lattice constant so that the second semiconductor material in the second regions is strained with respect to the first semiconductor material in the first regions and one or more PN junctions exists therebetween;
- and
- electrodes adapted to carry current through at least part of the strained second semiconductor material of the second regions.
A semiconductor device embodying a superjunction structure, comprising:
- a substrate having a principal surface;
- a semiconductor transition layer having an outer surface and an inner surface at the principal surface of the substrate;
- first spaced-apart regions of a first semiconductor material having a first conductivity type and a first lattice constant on first parts of the outer surface of the semiconductor transition layer;
- second spaced-apart regions of a second semiconductor material on second parts of the outer surface of the semiconductor transition layer and interleaved with the first space-apart regions to produce one or more PN junctions between the first spaced-apart regions and the second spaced-apart regions, wherein the second semiconductor material has a second different conductivity type and a second lattice constant that is different from the first lattice constant, and wherein the second semiconductor material is strained with respect to the first semiconductor material;
- and
- electrodes adapted to carry current through at least part of the strained second semiconductor material of the second spaced-apart regions.
Dependencies are inferred from the claim text.