Semiconductor superjunction structure

A method for forming a semiconductor device, comprising:

• providing a substrate having an outer surface;
• forming on the outer surface, first spaced-apart semiconductor regions of a first conductivity type and first mobility;
• forming on the outer surface second semiconductor regions of a second opposite conductivity type and higher second mobility, interleaved with the first spaced-apart semiconductor regions to form a superjunction structure;
• and
• providing further electrically conducting regions coupled to the superjunction structure and adapted to control current flow to the second semiconductor regions.

A semiconductor device, comprising:

• interleaved regions of first and second semiconductor materials of, respectively, first and second conductivity types and first and second mobilities;
• wherein the second conductivity type is opposite the first conductivity type and the second mobility exceeds the first mobility for a first carrier type;
• wherein the first and second semiconductor materials are separated by substantially parallel PN junctions and form a superjunction structure;
• and
• electrical contacts coupled to the first and second materials so that in response to applied signals, a principal current of the first carrier type flows through the second material.