Y10S 252/95
Doping agent source material
Y10S252/95 (Doping agent source material) appears on 80 US grants and 1 published applications in this corpus.
Search patents in Y10S- Granted patents
- 80
- Published applications
- 1
- Assignees
- 39
- Inventors
- 127
- Latest grant
- 8 Feb 2011
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 5 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 6 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Method for preparing a source material for ion implantation8 Feb 2011US 7,883,573 B2Texas Instruments Incorporated
- Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors24 Feb 2004US 6,695,903 B1Merck Patent GmbH
- Method of feeding dopant for continuously-charged method and a dopant composition2 Feb 1999US 5,866,094 AKomatsu Electronic Metals Co., Ltd.
- Method of feeding a dopant in a continuously charging method23 Dec 1997US 5,700,321 AKomatsu Electronic Metals Co., Ltd.
- Low temperature P.sub.2 O.sub.5 oxide diffusion source12 Aug 1997US 5,656,541 ATechneglas, Inc.
Most cited
By later US patents
- Process for production of III-V compound crystals65US 4,010,045 A1977
- Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors64US 6,695,903 B1Merck Patent GmbH · 2004
- Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon45US 4,251,285 AWestinghouse Electric Corp. · 1981
- Method of depositing arsine, antimony and phosphine substitutes28US 4,904,616 AAir Products and Chemicals, Inc. · 1990
- MOCVD of semi-insulating indium phosphide based compositions26US 4,716,130 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1987