US 7,883,573 B2Granted

Method for preparing a source material for ion implantation

AssigneeTexas Instruments Incorporated

InventorAmitabh Jain

Life of this patent

Estimating the term…

Abstract

The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.

Claims6

Dependent claims

An ion-implantation source material, comprising:

a paste comprising a deliquescent ion implantation source material and an organic liquid, wherein a weight ratio of said organic liquid to said deliquescent ion implantation source material is between about 1:4 and about 1:15.

Dependencies are inferred from the claim text.

Facts

Application: 11/697,790Filed 9 Apr 2007 · division
Priority: 17 Aug 2004
Published: US 2007/0178651 A12 Aug 2007
Granted: 8 Feb 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H01J 37/08
Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical…:…
H10P 30/204
Characterised by the semiconductor materials: into Group IV semiconductors
H10P 30/21
Into semiconductor materials, e.g. for doping: of electrically active species
H10P 30/225
Into semiconductor materials, e.g. for doping: of a molecular ion, e.g. decaborane

Family

Application10/920,023Parent of this division · filed 17 Aug 2004
Application60/496,758Us provisional application · filed 29 Mar 2007
US 2007/0178651 A1Pre-grant publication · published 2 Aug 2007
US 7,494,905 B2Parent of this division
US 2005/0040496 A1Published application
US 7,883,573 B2This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

patentgrep

Loading patent…

patentgrepSearch patents

Back to results