Low temperature P.sub.2 O.sub.5 oxide diffusion source
AssigneeTechneglas, Inc.
InventorsJames E. Rapp, Gary R. Pickrell
Life of this patent
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Abstract
The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.
Claims5
A method of making a solid diffusion source and firing the source to provide a doped silicon wafer, the method comprising the steps of:
- A. heating a R.sub.2 O.sub.3 oxide and H.sub.3 PO.sub.4 to provide a R.sub.2 O.sub.3 oxide/P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1:5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Tm, Yb, or Dy.
- B. firing the composition to evolve P.sub.2 O.sub.5 to deposit a phosphorus containing coating on the silicon wafer at about 750.degree. C. to 1025.degree. C. to form a glassy layer having a thickness of about 300.degree. A to about 2500.degree. A on the silicon wafer.
A process of making a doped source wafer from a doping source by a R.sub.2 O.sub.3 oxide/P.sub.2 O.sub.5 composition consisting essentially of an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1:5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Tm, Yb or Dy, the process comprising firing the doping source at about 75020 C. to 975.degree. C. to form a glassy layer of about 500 A.degree. to 2000 A.degree. on the wafer.
A method of using a doping source to provide a doped silicon wafer, the doping source consisting essentially of a R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is about 1:5, and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm, or Dy, the method comprising firing the doping source at about 750.degree. C. to 975.degree. C. to evolve P.sub.2 O.sub.5 to deposit a phosphorus containing coating having a thickness of about 300 A.degree. to 2000 A.degree. on a silicon wafer to form a glass layer on the silicon wafer.
A method of making a doped silicon wafer using a solid diffusion source, the method comprising the steps of:
- A. heating R.sub.2 O.sub.3 oxide, ZrO.sub.2 and H.sub.3 PO.sub.4 to provide a R.sub.2 O.sub.3 oxide/P.sub.2 O.sub.5 composition consisting essentially of an R.sub.2 O.sub.3 /ZrO.sub.2 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 /P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Tm, Yb or Dy, the ZrO.sub.2 being in the crystalline structure;
- B. firing the composition to evolve P.sub.2 O.sub.5 to deposit a phosphorus containing coating on the silicon wafer to form a glassy layer on the silicon wafer.
Dependencies are inferred from the claim text.