MOCVD of semi-insulating indium phosphide based compositions
AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsWilbur D. Johnston, Jr., Judith A. Long
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Abstract
It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
Claims24
A process for producing a device comprising the steps of (1) forming a region of a semi-insulating indium phosphide-based material by contacting a substrate with a deposition gas stream and (2) forming the active region of said device CHARACTERIZED IN THAT said semi-insulating region is formed by introducing a dopant precursor comprising a composition chosen from the group consisting of ferrocene based compositions and iron pentacarbonyl based compositions into said deposition gas stream, wherein said deposition gas stream is produced by combining entities including an organo-indium compound and a source of phosphorus wherein the mole ratio of iron to indium in said gas stream is less than 1.2.times.10.sup.-4, and whereby said semi-insulating indium phosphide has a resistivity of at least 10.sup.6 ohm-cm.
Dependencies are inferred from the claim text.