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US 2007/0178651 A1Published application
Method for Preparing a Source Material for Ion Implantation
AssigneeTexas Instruments Incorporated
InventorAmitabh Jain
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Abstract
The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.
Claims7
An ion-implantation source material, comprising:
- a paste comprising a deliquescent ion implantation source material and an organic liquid, wherein a weight ratio of said organic liquid to said deliquescent ion implantation source material is between about 1:1 and about 1:100.
Dependencies are inferred from the claim text.