Y10S 117/916
Oxygen testing
Y10S117/916 (Oxygen testing) appears on 20 US grants and 4 published applications in this corpus.
Search patents in Y10S- Granted patents
- 20
- Published applications
- 4
- Assignees
- 15
- Inventors
- 48
- Latest grant
- 1 Sep 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Silicone single crystal production process1 Sep 2009US 7,582,160 B2Siltronic AG
- Manufacturing method of silicon wafer21 Jul 2009US 7,563,319 B2Sumitomo Mitsubishi Silicon Corporation
- Silicon seed crystal and method for producing silicon single crystal30 Dec 2003US 6,670,036 B2Shin-Etsu Handotai Co., Ltd.
- Process for producing nitrogen-doped semiconductor wafers26 Feb 2002US 6,350,314 B1Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Process for producing silicon semiconductor wafers with low defect density10 Aug 1999US 5,935,320 AWacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Silicone single crystal production process21 Dec 2006US 2006/0283378 A1Siltronic AG
- Manufacturing method of silicon wafer20 Oct 2005US 2005/0229842 A1Sumitomo Mitsubishi Silicon Corporation
- Silicon seed crystal and method for producing silicon single crystal6 May 2004US 2004/0083945 A1Shin-Etsu Handotai Co., Ltd.
- Silicon seed crystal and method for producing silicon single crystal25 Jul 2002US 2002/0098358 A1Shin-Etsu Handotai Co., Ltd.
Most cited
By later US patents
- Process for producing silicon semiconductor wafers with low defect density94US 5,935,320 AWacker Siltronic Gesellschaft fur Halbleitermaterialien AG · 1999
- Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film41US 4,888,202 ANippon Telegraph and Telephone Corporation · 1989
- Oxygen precipitation control in czochralski-grown silicon cyrstals40US 5,474,020 ATexas Instruments Incorporated · 1995
- Control of oxygen- and carbon-related crystal defects in silicon processing20US 4,400,232 AEagle-Picher Industries, Inc. · 1983
- Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film20US 5,016,563 ANippon Telegraph and Telephone Corporation · 1991