Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
AssigneeNippon Telegraph and Telephone Corporation
InventorsToshiaki Murakami, Kazuyuki Moriwaki
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Abstract
In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
Claims6
A method of manufacturing a thin single crystal film of a compound oxide, comprising the steps of:
- maintaining a vacuum pressure in the order of 10.sup.-9 Torr or less;
- heating a substrate to a temperature of less than 400.degree. C.;
- evaporating different types of materials for forming the compound oxide;
- depositing the evaporated materials on a substrate to form the thin film;
- generating oxygen ions, the oxygen ion generating step including the steps of generating an oxygen plasma, mass-separating oxygen ions from the accelerated oxygen plasma to separate O.sup.+ or O.sub.2.sup.+ ions, and decelerating the separated oxygen ions to a speed corresponding to energy of 10 to 200 eV;
- and
- implanting oxygen ions, decelerated in the decelerating step and having energy of 10 to 200 eV, in the thin film as it is being formed on said substrate while monitoring and controlling the number of oxygen ions.
Dependencies are inferred from the claim text.