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US 5,016,563 AGranted
Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
AssigneeNippon Telegraph and Telephone Corporation
InventorsToshiaki Murakami, Kazuyuki Moriwaki
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Abstract
In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
Claims5
An apparatus for manufacturing a thin oxide film, comprising:
- means for generating oxygen ions;
- mass separating means for separating oxygen ions from an oxygen plasma generated by said oxygen ion generating means, in order to measure the value of ion current density and to ascertain the number of oxygen atoms;
- oxygen ion decelerating means for decelerating the separated oxygen ions to a speed corresponding to an energy of 10 to 200 eV and for implanting the decelerated oxygen ions as an oxygen ion beam in a thin oxide film which is being formed on a substrate;
- a film formation chamber in which the substrate is placed, said chamber being arranged separate from said oxygen ion generating means and adapted to be evacuated so as to have a higher vacuum than that of said oxygen ion generating means;
- and
- material feed means for feeding material of a thin oxide film to be formed on the substrate.
3 more elements
Dependencies are inferred from the claim text.