Process for producing nitrogen-doped semiconductor wafers
AssigneeWacker Siltronic Gesellschaft fur Halbleitermaterialien AG
InventorsWilfried Von Ammon, Herbert Weidner, Dirk Zemke, Christoph Frey
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Abstract
A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH3. The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.
Claims12
A process for producing a nitrogen-doped semiconductor wafer, comprising the steps of
- pulling a single crystal from a melt of molten semiconductcr material, and feeding a dopant gas which contains NH3 to the semiconductor material, whereby nitrogen is derived from said dopant gas;
- feeding the dopant gas to the semiconductor material at most until pulling begins for that part of the single crystal from which semiconductor wafers are cut;
- and
- cutting the nitrogen-doped semiconductor wafers off the pulled single crystal.
Dependencies are inferred from the claim text.