Y10S 117/913
Graphoepitaxy or surface modification to enhance epitaxy
Y10S117/913 (Graphoepitaxy or surface modification to enhance epitaxy) appears on 96 US grants and 8 published applications in this corpus.
Search patents in Y10S- Granted patents
- 96
- Published applications
- 8
- Assignees
- 44
- Inventors
- 160
- Latest grant
- 1 Aug 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 7 | 0 |
| 1994 | 9 | 0 |
| 1995 | 7 | 0 |
| 1996 | 5 | 0 |
| 1997 | 5 | 0 |
| 1998 | 7 | 0 |
| 1999 | 4 | 0 |
| 2000 | 7 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 2 |
| 2003 | 1 | 1 |
| 2004 | 1 | 3 |
| 2005 | 2 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 0 | 1 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods for enhancing P-type doping in III-V semiconductor films1 Aug 2017US 9,721,810 B2University of Utah Research Foundation
- Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film9 Dec 2014US 8,906,487 B2Seiko Epson Corporation
- Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy29 Sep 2009US 7,594,967 B2AmberWave Systems Corporation
- Free-standing (Al, Ga, In)N and parting method for forming same25 Oct 2005US 6,958,093 B2Cree, Inc.
- Layered photonic crystals2 Aug 2005US 6,924,921 B2MCNC Research and Development Institute
- Methods for enhancing p-type doping in iii-v semiconductor films8 Aug 2013US 2013/0203243 A1University of Utah
- Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film26 Jan 2012US 2012/0021173 A1Seiko Epson Corporation
- Layered photonic crystals15 Jul 2004US 2004/0134414 A1MCNC Research and Development Institute
- Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy4 Mar 2004US 2004/0040493 A1AmberWave Systems Corporation
- Layer-by-layer assembly of photonic crystals5 Feb 2004US 2004/0020423 A1MCNC Research and Development Institute
Most cited
By later US patents
- Diamond electronic device and process for producing the same282US 5,632,812 ACanon Kabushiki Kaisha · 1997
- Thermal mismatch compensation to produce free standing substrates by epitaxial deposition128US 6,146,457 ACBL Technologies, Inc. · 2000
- Process for growing III-V compound semiconductors on sapphire using a buffer layer121US 4,855,249 ANagoya University · 1989
- Method of epitaxial growth of semiconductor106US 5,373,803 ASony Corporation · 1994
- Method of making a semiconductor thin-film97US 5,531,182 ACanon Kabushiki Kaisha · 1996