Methods for enhancing P-type doping in III-V semiconductor films
AssigneeUniversity of Utah Research Foundation
InventorsFeng Liu, Gerald Stringfellow, Junyi Zhu
Life of this patent
Estimating the term…
Abstract
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
Claims19
A method of doping a III-V semiconductor film, the method comprising:
- presenting a p-type dopant which comprises cadmium to an epitaxial growth process;
- presenting a surfactant capable of acting as an electron reservoir to the epitaxial growth process;
- presenting hydrogen to the epitaxial growth process;
- and
- growing a III-V semiconductor film under conditions including the p-type dopant, the surfactant, and the hydrogen throughout the epitaxial growth process that promote the formation of a p-type doped III-V semiconductor film.
A method of doping a semiconductor film, comprising:
- growing a semiconductor film in the presence of
- a p-type dopant which comprises cadmium;
- a surfactant;
- and
- a hydrogen source;
- and
- creating conditions during the growing of the semiconductor film that promote the formation of a semiconductor film doped with the p-type dopant, such that the p-type dopant, the surfactant and the hydrogen source are present throughout growth of the semiconductor film doped with the p-type dopant.
A method of doping a III-V semiconductor film, the method comprising:
- growing epitaxially the III-V semiconductor film entirely in the presence of a p-type dopant which is cadmium, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a p-type doped III-V semiconductor film.
The method of 16, wherein the III-V semiconductor film is a GaP semiconductor film.
Dependencies are inferred from the claim text.