Free-standing (Al, Ga, In)N and parting method for forming same

A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

• providing an epitaxially compatible sacrificial template;
• depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material;
• and
• before the composite sacrificial template/(Al, Ga, In)N article is cooled to ambient temperature, impinging laser energy on the interface to at least partially part the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article.

A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

• providing an epitaxially compatible sacrificial template;
• depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material;
• and
• parting the sacrificial template from the (Al, Ga, In)N material tn yield the free-standing (Al, Ga, In)N article,
• wherein during the step of depositing the single crystal (Al, Ga, In)N material on the template, backside deposition on the composite sacrificial template/(Al, Ga, In)N article is at least partially suppressed by a step selected from the group consisting of:
• use of a cover plate during the depositing step;
• molten glass sealing of the sacrificial template;
• use of vacuum to fix the position of the composite sacrificial template/(Al, Ga, In)N article out of exposure to (Al, Ga, In)N material during said depositing step;
• physically fixedly positioning the composite sacrificial template/(Al, Ga, In)N article out of exposure to (Al, Ga, In)N material during said depositing step;
• and application of a coating on the sacrificial template that is inhibitive of backside deposits thereon.

A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

• providing an epitaxially compatible sacrificial template;
• depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material;
• and
• parting the sacrificial template from the (Al, Ga, In)N material using impingement of laser energy an the interface, while maintaining the composite sacrificial template/(Al, Ga, In)N article at temperature at or near the elevated temperature of the depositing step to yield the free-standing (Al, Ga, In)N article.

A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

• providing an epitaxially compatible sacrificial template;
• depositing single crystal (Al, Ga, In)N material on the template by HVPE at an elevated deposition temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material;
• and
• parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article at temperatures in excess of the deposition temperature of the (Al, Ga, In)N material, while cracked nitrogen is introduced during said parting.

A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

• providing an epitaxially compatible sacrificial template;
• depositing single crystal (Al, Ga, In)N material on the template by HVPE at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material;
• and
• parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article,
• wherein during the step of depositing the single crystal (Al, Ga, In)N material, backside deposition one the composite sacrificial template/(Al, Ga, In)N article is at least partially suppressed by the application of a coating on the sacrificial template that is inhibitive of backside deposits thereon, wherein the coating comprises a material selected from the group consisting of SiO2 and Si3N4.