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US 7,594,967 B2Granted
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
AssigneeAmberWave Systems Corporation
InventorsChristopher J. Vineis, Richard Westhoff, Mayank Bulsara
Life of this patent
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Abstract
A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up defects.
Claims46
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface and a rough edge angled away from the surface;
- thereafter growing a cap layer over the top surface of the substrate, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate;
- and
- polishing the rough edge of the substrate after at least a portion of the cap layer is grown.
1 more element
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface and a rough edge angled away from the surface;
- thereafter forming a relaxed compositionally graded layer over the top surface of the substrate;
- polishing the rough edge of the substrate after at least a portion of the graded layer is formed;
- and
- forming a cap layer over the graded layer, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate,
- wherein the graded layer is proximate the relaxed cap layer.
3 more elements
A method for forming a semiconductor structure, the method comprising the steps of:
- providing a semiconductor substrate having a top surface and a rough edge angled away from the surface;
- thereafter forming a relaxed compositionally graded layer over the top surface of the substrate;
- forming a cap layer proximate the graded layer, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate;
- forming a strained layer over the relaxed cap layer;
- and
- polishing the rough edge of the substrate after at least a portion of the graded layer is formed.
3 more elements
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface and a rough outer face not coplanar with the top surface;
- thereafter growing a cap layer over the top surface of the substrate, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate;
- and
- polishing the rough outer face of the substrate after at least a portion of the cap layer is grown.
1 more element
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface and a rough outer face not coplanar with the top surface;
- thereafter forming a relaxed compositionally graded layer over the top surface of the substrate;
- polishing the rough outer face of the substrate after at least a portion of the graded layer is formed;
- and
- forming a cap layer over the graded layer, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate,
- wherein the graded layer is proximate the relaxed cap layer.
3 more elements
A method for forming a semiconductor structure, the method comprising the steps of:
- providing a semiconductor substrate having a top surface and a rough outer face not coplanar with the top surface;
- thereafter forming a relaxed compositionally graded layer over the top surface of the substrate;
- forming a cap layer proximate the graded layer, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate;
- forming a strained layer over the relaxed cap layer;
- and
- polishing the rough outer face of the substrate after at least a portion of the graded layer is formed.
3 more elements
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface, a bottom surface, and a rough outer face disposed between the top and bottom surfaces;
- thereafter growing a cap layer over the top surface of the substrate, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate;
- and
- polishing the rough outer face of the substrate after at least a portion of the cap layer is grown.
1 more element
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface, a bottom surface, and a rough outer face disposed between the top and bottom surfaces;
- forming a relaxed compositionally graded layer over the top surface of the substrate having the rough edge;
- and
- forming a cap layer over the graded layer, the cap layer being substantially relaxed and having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate,
- wherein the rough outer face has a roughness greater than 10 angstroms.
2 more elements
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate having a top surface, a bottom surface, and a rough outer face disposed between the top and bottom surfaces;
- thereafter forming a relaxed compositionally graded layer over the top surface of the substrate;
- polishing the rough outer face of the substrate after at least a portion of the graded layer is formed;
- and
- forming a cap layer over the graded layer, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate,
- wherein the graded layer is proximate the relaxed cap layer.
3 more elements
A method for forming a semiconductor structure, the method comprising the steps of:
- providing a semiconductor substrate having a top surface defining a surface plane, a bottom surface, and a rough outer face disposed between the top and bottom surfaces;
- thereafter forming a relaxed compositionally graded layer over the top surface of the substrate;
- forming a cap layer proximate the graded layer, the cap layer being substantially relaxed, having a uniform composition, and having a lattice constant different from a lattice constant of the semiconductor substrate;
- forming a strained layer over the relaxed cap layer;
- and
- polishing the rough outer face of the substrate after at least a portion of the graded layer is formed.
3 more elements
Dependencies are inferred from the claim text.