Methods for enhancing p-type doping in iii-v semiconductor films
AssigneeUniversity of Utah
InventorsFeng Liu, Gerald Stringfellow, Junyi Zhu
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Abstract
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
Claims20
A method of doping a III-V semiconductor film, the method comprising:
- presenting a p-type dopant to an epitaxial growth process;
- presenting a surfactant capable of acting as an electron reservoir to the epitaxial growth process;
- presenting hydrogen to the epitaxial growth process;
- and
- growing a III-V semiconductor film under conditions that promote the formation of a p-type doped III-V semiconductor film.
A method of doping a semiconductor film, comprising:
- growing a semiconductor film in the presence of
- a dopant;
- a surfactant;
- and
- a hydrogen source;
- and
- creating conditions during the growing of the semiconductor film that promote the formation of a semiconductor film doped with the p-type dopant.
A method of doping a III-V semiconductor film, the method comprising:
- growing epitaxially the III-V semiconductor film in the presence of a p-type dopant selected from the group consisting of magnesium, beryllium and cadmium, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a p-type doped III-V semiconductor film.
Dependencies are inferred from the claim text.