Y10S 117/905
Electron beam
Y10S117/905 (Electron beam) appears on 71 US grants and 9 published applications in this corpus.
Search patents in Y10S- Granted patents
- 71
- Published applications
- 9
- Assignees
- 41
- Inventors
- 134
- Latest grant
- 23 Mar 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 1 | 0 |
| 1982 | 5 | 0 |
| 1983 | 6 | 0 |
| 1984 | 2 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 2 |
| 2004 | 1 | 1 |
| 2005 | 1 | 3 |
| 2006 | 1 | 0 |
| 2007 | 2 | 1 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- PBN container and method for producing PBN container23 Mar 2010US 7,682,451 B2Shin-Etsu Chemical Co., Ltd.
- Crystallization apparatus and crystallization method11 Aug 2009US 7,572,335 B2Advanced LCD Technologies Development Center Co., Ltd.
- Method to reduce crystal defects particularly in group III-nitride layers and substrates11 Mar 2008US 7,341,628 B2
- Method for producing monocrystalline structures11 Dec 2007US 7,306,670 B2Siemens Aktiengesellschaft
- Methods for repair of single crystal superalloys by laser welding and products thereof31 Jul 2007US 7,250,081 B2Honeywell International Inc.
- Compound semiconductor modified surface by use of pulsed electron beam and ion implantation through a deposited metal layer17 Apr 2008US 2008/0087984 A1
- PBN container and method for producing PBN container4 Oct 2007US 2007/0231235 A1Shin-Etsu Chemical Co., Ltd.
- Method to reduce crystal defects particularly in group III-nitride layers and substrates23 Jun 2005US 2005/0136627 A1
- Methods for repair of single crystal superalloys by laser welding and products thereof9 Jun 2005US 2005/0120941 A1Honeywell International Inc.
- Crystallization apparatus and crystallization method3 Mar 2005US 2005/0048383 A1Advanced LCD Technologies Development Center Co., Ltd.
Most cited
By later US patents
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Patterned epitaxial regrowth using overlapping pulsed irradiation106US 4,234,358 ABell Telephone Laboratories, Incorporated · 1980
- Compound semiconductor single crystal and fabrication process for compound semiconductor device97US 6,589,447 B1Shin-Etsu Handotai Co., Ltd. · 2003
- Method of producing tandem solar cell devices from sheets of crystalline material96US 4,816,420 AMassachusetts Institute of Technology · 1989
- Method of producing polycrystalline semiconductor thin film81US 5,409,867 AFuji Electric Co., Ltd. · 1995