Patterned epitaxial regrowth using overlapping pulsed irradiation
AssigneesWestern Electric Company, Inc., Bell Telephone Laboratories, Incorporated
InventorsGeorge K. Celler, Lionel C. Kimerling, Harry J. Leamy, John M. Poate, George A. Rozgonyi
Life of this patent
Estimating the term…
Abstract
A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.
Claims23
A method comprising
- irradiating a first region of material, which adjoins a single crystal material, with a pulse of energy which is absorbed at least in part by the material;
- and
- irradiating subsequently a second region of material adjacent to the first region;
- the invention characterized in that the irradiated regions overlap each other sufficiently, and the energy of the irradiating pulse and the absorptivity of the irradiated material are of such values that each region of the material which is irradiated is seeded by adjacent single crystal material and is epitaxially regrown to an essentially single crystal structure, thereby defining an essentially continuous single crystal pattern.
Dependencies are inferred from the claim text.