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US 7,306,670 B2Granted
Method for producing monocrystalline structures
AssigneeSiemens Aktiengesellschaft
InventorsThomas Beck, Georg Bostanjoglo, Nigel-Philip Cox, Rolf Wilkenhöner
Life of this patent
Estimating the term…
Abstract
In the case of the epitaxial growth according to the prior art, a number o strips often have to be produced in a plane in order to restore an area to be repaired. This leads to overlapping and misorientation of the crystalline structures. In the case of the method according to the invention, the strip is of such a width that no overlapping occurs, since the width is adapted to the contour of the area to be repaired.
Claims17
A method for producing monocrystalline structures, components or workpieces on substrates comprising:
- providing epitaxial growth;
- melting a surface of the component by an energy input of an energy source by a focal spot of the energy source, the focal spot having a geometry with a width and a length in a direction of movement of the focal spot transverse to the width that is less than the width;
- controlling a power intensity at opposed ends of the width of the focal spot to be greater than a power intensity in a central area of the width of the focal spot;
- feeding material to a molten area;
- and
- melting the fed material with the surface, whereby the molten material is
- introduced into the monocrystalline structure to solidify.
4 more elements
A method for producing monocrystalline structures, components or workpieces on substrates, comprising:
- providing a monocrystalline layer;
- melting a surface of the monocrystalline layer by an energy input of an energy source by a focal spot of the energy source having a geometry with a width sufficiently wide to melt a desired width of the surface to be melted and a length in a direction of movement of the focal spot transverse to the width that is less than the width;
- advancing the focal spot in a single continuous movement in the direction transverse to the width only;
- controlling a temperature of the melted surface by controlling the energy source;
- feeding material to the melted surface;
- and
- melting the fed material completely, whereby the molten fed material is introduced into the monocrystalline layer to solidify;
- wherein the width of the focal spot is changed during operation in response to a sensed width of the surface to be melted.
5 more elements
A method for producing monocrystalline structures, components or workpieces on substrates, comprising:
- providing a monocrystalline layer;
- melting a surface of the monocrystalline layer by an energy input of an energy source by a focal spot of the energy source having a geometry with a width sufficiently wide to melt a desired width of the surface to be melted and a length in a direction of movement of the focal spot transverse to the width that is less than the width;
- advancing the focal spot in a single continuous movement in the direction transverse to the width only;
- controlling a temperature of the melted surface by controlling the energy source;
- feeding material to the melted surface;
- and
- melting the fed material completely, whereby the molten fed material is introduced into the monocrystalline layer to solidify;
- wherein the focal spot has profile ends, and the intensity of the energy input is increased at the profile ends as compared with the middle area of the focal spot.
5 more elements
A method for producing monocrystalline structures, components or workpieces on substrates, comprising:
- providing a monocrystalline layer;
- melting a surface of the monocrystalline layer by an energy input of an energy source by a focal spot of the energy source having a geometry with a width sufficiently wide to melt a desired width of the surface to be melted and a length in a direction of movement of the focal spot transverse to the width that is less than the width;
- advancing the focal spot in a single continuous movement in the direction transverse to the width only;
- controlling a temperature of the melted surface by controlling the energy source;
- feeding material to the melted surface;
- and
- melting the fed material completely, whereby the molten fed material is introduced into the monocrystalline layer to solidify;
- further comprising:
- moving the focal spot over the substrate in a direction of advancement wherein the substrate has an area to which material is added;
- and
- adapting the focal spot to the geometry of the area such that the width of the focal spot is adapted to a width of the area transversely in relation to the direction of advancement.
8 more elements
A method for producing monocrystalline structures, components or workpieces on substrates, comprising:
- providing a monocrystalline layer;
- melting a surface of the monocrystalline layer by an energy input of an energy source by a focal spot of the energy source having a geometry with a width sufficiently wide to melt a desired width of the surface to be melted and a length in a direction of movement of the focal spot transverse to the width that is less than the width;
- advancing the focal spot in a single continuous movement in the direction transverse to the width only;
- controlling a temperature of the melted surface by controlling the energy source;
- feeding material to the melted surface;
- and
- melting the fed material completely, whereby the molten fed material is introduced into the monocrystalline layer to solidify;
- wherein the energy input takes place by a laser;
- further comprising;
- moving the focal spot over the substrate in a direction of
- advancement wherein the substrate has an area to which material is added;
- and
- adapting the focal spot to the geometry of the area such that the width of the focal spot is adapted to a width of the area transversely in relation to the direction of advancement.
10 more elements
A method for producing monocrystalline structures, components or workpieces on substrates, comprising:
- providing a monocrystalline layer;
- melting a surface of the monocrystalline layer by an energy input of an energy source by a focal spot of the energy source having a geometry with a width sufficiently wide to melt a desired width of the surface to be melted and a length in a direction of movement of the focal spot transverse to the width that is less than the width;
- advancing the focal spot in a sinale continuous movement in the direction transverse to the width only;
- controlling a temperature of the melted surface by controlling the energy source;
- feeding material to the melted surface;
- and
- melting the fed material completely, whereby the molten fed material is introduced into the monocrystalline layer to solidify;
- wherein the energy input takes place by electron beams;
- further comprising:
- moving the focal spot over the substrate in a direction of
- advancement wherein the substrate has an area to which material is added;
- and
- adapting the focal spot to the geometry of the area such that the width of the focal spot is adapted to a width of the area transversely in relation to the direction of advancement.
10 more elements
Dependencies are inferred from the claim text.