Method to reduce crystal defects particularly in group III-nitride layers and substrates
OwnerAndreas Melasinventor
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Abstract
Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.
Claims20
A method of improving qualtiy of a compound semiconductor material comprising:
- A. providing a layer of said compound semiconductor-material, wherein said compound semiconductor material comprises a metal component and non-metal component and said layer comprises a top surface;
- B. placing said layer of said compound semiconductor material into an electron beam metal deposition tool amd depositing a layer of said metal-component upon said top surface;
- C. placing said layer of said compound semiconductor with said deposited layer of said metal compound into an ion implantation tool and implanting said non metal component into said layers;
- D. placing said layer of said compound semiconductor with said deposited metal layer and said implanted non-metal component into directed energy beam tool and exposing said layers to-said energy beam.
A compound semiconductor material with an improved crystalline quality formed by a method comprising:
- providing a layer of said compound semiconductor material, wherein said compound semiconductor material comprises a metal component and a non-metal component and said layer comprises a top surface;
- placing said layer of said compound semiconductor material into an electron beam metal deposition tool and depositing a layer of said metal component upon said top surface;
- placing said layer of said compound semiconductor with said deposited layer of said metal component into an ion implantation tool and implanting said non metal component into said layers;
- placing said layer of said compound semiconductor with said deposited metal layer and said implanted non-metal component into a directed energy beam tool and exposing said layers to said energy beam.
Dependencies are inferred from the claim text.