Compound semiconductor single crystal and fabrication process for compound semiconductor device
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsJunya Ishizaki, Nobuhiko Noto
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Abstract
Provided is a compound semiconductor single crystal and a fabrication process for a compound semiconductor device capable of forming a prescribed pattern without requirement of many steps. A group V element component in a III-V compound semiconductor single crystal or a group VI element component in the II-VI compound semiconductor single crystal is reduced less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal in a pattern-shaped portion.
Claims10
A compound semiconductor single crystal, wherein a III-V compound semiconductor single crystal, an AlGaAs oxide film layer or a II-VI compound semiconductor single crystal includes a region in which a group V element component or a group VI element component is less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal, wherein the III-V compound is selected from the group consisting of AlAs, InAs, AlGaAs, AlInAs, AlP, AlGaP, InGaP, AlInP, AlGaInP, GaAsP, AlAsP, InAsP, AlGaAsP, AlInAsP, GaN, AlN, InN, AlGaN, AlInN, InGaN, AlGaInN, GaAsN, AlAsN, InAsN, AlGaAsN, InGaAsN and InAlAsN, and wherein the II-VI compound is selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe and CdTe.
A fabrication process for a compound semiconductor device comprising:
- a transmuting step of transmuting part of a surface of a III-V compound semiconductor single crystal, an AlGaAs oxide film layer or a II-VI compound semiconductor single crystal into a pattern-shaped portion by reducing a group V element component in the III-V compound semiconductor single crystal or in the AlGaAs oxide film layer, or a group VI element component in the II-VI compound semiconductor single crystal less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal,
- wherein the III-V compound is selected from the group consisting of AlAs, InAs, AlGaAs, AlInAs, AlP, AlGaP, InGaP, AlInP, AlGaInP, GaAsP, AlAsP, InAsP, AlGaAsP, AlInAsP, GaN, AlN, InN, AlGaN, AlInN, InGaN, AlGaInN, GaAsN, AlAsN, InAsN, AlGaAsN, InGaAsN and InAlAsN, and wherein the II-VI compound is selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe and CdTe;
- and
- an etching step of effecting selective etching on the corresponding compound semiconductor single crystal or the AlGaAs oxide film layer.
A fabrication process for a compound semiconductor device comprising:
- a growth step of forming a III-V compound semiconductor single crystal layer, an AlGaAs oxide film layer or a II-VI compound semiconductor single crystal layer on a semiconductor single crystal substrate,
- wherein the III-V compound is selected from the group consisting of AlAs, InAs, AlGaAs, AlInAs, AlP, AlGaP, InGaP, AlInP, AlGaInP, GaAsP, AlAsP, InAsP, AlGaAsP, AlInAsP, GaN, AlN, InN, AlGaN, AlInN, InGaN, AlGaInN, GaAsN, AlAsN, InAsN, AlGaAsN, InGaAsN and InAlAsN, and wherein the II-VI compound is selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe and CdTe;
- a transmuting step of irradiating a laser beam on a surface of the compound semiconductor single crystal layer or the AlGaAs oxide film layer to transmute the surface;
- and
- an etching step of effecting selective etching on the compound semiconductor single crystal layer or the AlGaAs oxide film layer having a region transmuted in the transmuting step to form a protective film.
Dependencies are inferred from the claim text.