H10P 54/30
Cutting or separating of wafers, substrates or parts of devices: by forming
Official title: by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation
H10P54/30 (Cutting or separating of wafers, substrates or parts of devices: by forming) appears on 2 US grants and 24 published applications in this corpus.
Search patents in H10P- Granted patents
- 2
- Published applications
- 24
- Assignees
- 19
- Inventors
- 68
- Latest grant
- 7 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2020 | 0 | 1 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 0 | 3 |
| 2025 | 0 | 3 |
| 2026 | 2 | 16 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for slicing crystal material, method for manufacturing wafer, and member comprising crystal material17 Sep 2026US 2026/0275573 A1National University Corporation Chiba University
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247893 A1Shin-Etsu Handotai Co., Ltd.
- Method for manufacturing a wafer and method for manufacturing a bonded wafer20 Aug 2026US 2026/0247894 A1Disco Corporation
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247934 A1Shin-Etsu Handotai Co., Ltd.
- Stealth wafer separation techniques for wafer-to-wafer bonding23 Jul 2026US 2026/0215195 A1Micron Technology, Inc.
Most cited
By later US patents
No patent in this class has been cited by a later US patent yet.