H10P 34/10
Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of
Official title: {with corpuscular radiation}
H10P34/10 (Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of) appears on 18 US grants and 22 published applications in this corpus.
Search patents in H10P- Granted patents
- 18
- Published applications
- 22
- Assignees
- 12
- Inventors
- 35
- Latest grant
- 1 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 2 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 4 |
| 2015 | 2 | 5 |
| 2016 | 2 | 0 |
| 2017 | 2 | 1 |
| 2018 | 0 | 0 |
| 2019 | 1 | 3 |
| 2020 | 2 | 1 |
| 2021 | 2 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 1 |
| 2024 | 1 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Silicon carbide semiconductor device1 Oct 2024US 12,107,123 B2Fuji Electric Co., Ltd.
- Silicon carbide semiconductor device25 Apr 2023US 11,637,182 B2Fuji Electric Co., Ltd.
- Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device15 Jun 2021US 11,038,020 B2Fuji Electric Co., Ltd.
- Extreme ultraviolet (EUV) lithography patterning methods utilizing EUV resist hardening26 Jan 2021US 10,901,317 B2International Business Machines Corporation
- Method of manufacturing a semiconductor device in which a lifetime of carriers is controlled24 Nov 2020US 10,847,609 B2Fuji Electric Co., Ltd.
- Method for annealing high-k materials4 Jun 2026US 2026/0157157 A1ASM IP Holding B. V.
- Silicon carbide semiconductor device13 Jul 2023US 2023/0223443 A1Fuji Electric Co., Ltd.
- Silicon carbide semiconductor device19 Aug 2021US 2021/0257455 A1Fuji Electric Co., Ltd.
- Method of manufacturing a semiconductor device7 May 2020US 2020/0144360 A1Fuji Electric Co., Ltd.
- Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening19 Dec 2019US 2019/0384180 A1International Business Machines Corporation
Most cited
By later US patents
- Increasing the doping efficiency during proton irradiation7US 9,054,035 B2Infineon Technologies AG · 2015
- Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds4US 6,335,562 B12002
- Technique for suppression of latchup in integrated circuits (ICS)4US 6,878,595 B2Full Circle Research, Inc. · 2005
- Manufacturing method of silicon wafer4US 7,563,319 B2Sumitomo Mitsubishi Silicon Corporation · 2009
- Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device2US 11,038,020 B2Fuji Electric Co., Ltd. · 2021