Extreme ultraviolet (euv) lithography patterning methods utilizing euv resist hardening

A device, comprising:

• an extreme ultraviolet (EUV) resist mask disposed on a substrate, wherein the EUV resist mask comprises patterned openings which expose portions of an upper surface of an underlying layer of the substrate;
• an etch-resistant layer embedded in upper horizontal surfaces of the EUV resist mask, wherein the etch-resistant layer is formed by a process that is configured to implant a species into upper horizontal surfaces of the EUV resist mask and thereby form the etch-resistant layer that is embedded in the upper horizontal surfaces of the EUV resist mask, wherein the etch-resistant layer comprises a first thickness;
• and
• a hardened layer embedded in the exposed portions of the upper surface of the underlying layer of the substrate, wherein the hardened layer is formed as a result of implanting the species into the exposed portions of the upper surface of the underlying layer of the substrate, wherein the hardened layer has a second thickness which is less than the first thickness.

A device, comprising:

• a multi-layer lithographic stack disposed on a substrate, wherein the multi-layer lithographic stack comprises an extreme ultraviolet (EUV) resist mask, and wherein the EUV resist mask comprises patterned openings which expose portions of an upper surface of an underlying layer of the multi-layer lithographic stack;
• an etch-resistant layer embedded in upper horizontal surfaces of the EUV resist mask, wherein the etch-resistant layer is formed by a process which is configured to implant a species into upper horizontal surfaces of the EUV resist mask and thereby form the etch-resistant layer that is embedded in the upper horizontal surfaces of the EUV resist mask, wherein the etch-resistance layer comprises a first thickness;
• and
• a hardened layer embedded in the exposed portions of the upper surface of the underlying layer of the multi-layer lithographic stack, wherein the hardened layer is formed as a result of implanting the species into the exposed portions of the upper surface of the underlying layer of the multi-layer lithographic stack, wherein the hardened layer has a second thickness which is less than the first thickness.