H10N 79/00
Integrated devices, or assemblies of multiple devices, comprising at least one solid-state
Official title: Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10)
H10N79/00 (Integrated devices, or assemblies of multiple devices, comprising at least one solid-state) appears on 70 US grants and 111 published applications in this corpus.
Search patents in H10N- Granted patents
- 70
- Published applications
- 111
- Assignees
- 46
- Inventors
- 166
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 0 | 2 |
| 2009 | 1 | 4 |
| 2010 | 2 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 1 |
| 2013 | 2 | 0 |
| 2014 | 2 | 3 |
| 2015 | 1 | 0 |
| 2016 | 2 | 3 |
| 2017 | 1 | 0 |
| 2018 | 3 | 2 |
| 2019 | 0 | 0 |
| 2020 | 10 | 18 |
| 2021 | 7 | 2 |
| 2022 | 2 | 3 |
| 2023 | 3 | 14 |
| 2024 | 2 | 17 |
| 2025 | 17 | 24 |
| 2026 | 14 | 16 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with phase-change material and method for manufacturing thereof6 Oct 2026US 12,757,644 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change material switch with reduced insertion loss and methods for forming the same15 Sep 2026US 12,740,335 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of PCM-based capacitor bank15 Sep 2026US 12,740,343 B2Taiwan Semiconductor Manufacturing Comany, Ltd.
- Switch based on a phase change material25 Aug 2026US 12,721,052 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Radio frequency switch18 Aug 2026US 12,713,840 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Metal-insulator transition material-based multiport radio frequency switch24 Sep 2026US 2026/0293538 A1Dell Products L. P.
- Direct non-ohmic switch for voltage instability protection and methods for forming the same24 Sep 2026US 2026/0293539 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and fabrication of pcm-based capacitor bank24 Sep 2026US 2026/0293540 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Synaptic device and synaptic device array17 Sep 2026US 2026/0282767 A1Hong Kong Metropolitan University
- Capacitor circuit providing self-adjusting capacitance and methods for forming the same10 Sep 2026US 2026/0271630 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Hybrid MOS-PCM CMOS SOI switch75US 9,917,104 B1Newport Fab, LLC · 2018
- Integrated phase change switch51US 9,362,492 B2Qualcomm Switch Corp. · 2016
- Switch with phase change material41US 10,164,608 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives · 2018
- Three-terminal cascade switch for controlling static power consumption in integrated circuits11US 7,652,279 B2International Business Machines Corporation · 2010
- Method to make RF switches and circuits with phase-change materials10US 9,293,699 B1HRL Laboratories, LLC · 2016