Capacitor circuit providing self-adjusting capacitance and methods for forming the same

A method of forming a device structure comprising:

• forming semiconductor devices over a substrate;
• forming dielectric material layers over the semiconductor devices;
• forming metal interconnect structures within the dielectric material layers;
• forming a first capacitor-switch assembly by forming a first capacitor in a series connection with a first non-Ohmic switching device having a first threshold voltage, and forming a first primary switch electrode, a first secondary switch electrode, and a first non-Ohmic switching material portion;
• and
• forming a second capacitor-switch assembly by forming a second capacitor in a series connection with a second non-Ohmic switching device having a second threshold voltage different from the first threshold voltage, and forming a second primary switch electrode, a second secondary switch electrode, and a second non-Ohmic switching material portion,
• wherein a parallel connection of the first capacitor-switch assembly and the second capacitor-switch assembly is formed over the dielectric material layers, resulting in integrated decoupling capacitance.

A method of forming a device structure comprising:

• forming a first capacitor-switch assembly comprising a first series connection of a first capacitor and a first non-Ohmic switching device having a first threshold voltage;
• forming a second capacitor-switch assembly comprising a second series connection of a second capacitor and a second non-Ohmic switching device having a second threshold voltage different from the first threshold voltage;
• forming a first assembly node as a contiguous set of metal interconnect structures connecting a first secondary switch electrode and a second secondary switch electrode;
• and
• forming a second assembly node as a continuous lower capacitor electrode layer extending in a direction parallel to the contiguous set of metal interconnect structures,
• wherein a parallel connection of the first capacitor-switch assembly and the second capacitor-switch assembly is formed over a substrate, thereby inducing a combined capacitive node.