H10K 10/472
The gate dielectric comprising only inorganic materials
Official title: {the gate dielectric comprising only inorganic materials}
H10K10/472 (The gate dielectric comprising only inorganic materials) appears on 172 US grants and 208 published applications in this corpus.
Search patents in H10K- Granted patents
- 172
- Published applications
- 208
- Assignees
- 98
- Inventors
- 442
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 1 |
| 2002 | 3 | 3 |
| 2003 | 2 | 1 |
| 2004 | 1 | 9 |
| 2005 | 5 | 3 |
| 2006 | 5 | 16 |
| 2007 | 1 | 11 |
| 2008 | 6 | 23 |
| 2009 | 7 | 10 |
| 2010 | 6 | 8 |
| 2011 | 15 | 9 |
| 2012 | 8 | 10 |
| 2013 | 11 | 6 |
| 2014 | 9 | 5 |
| 2015 | 9 | 10 |
| 2016 | 9 | 11 |
| 2017 | 14 | 5 |
| 2018 | 5 | 19 |
| 2019 | 10 | 4 |
| 2020 | 10 | 11 |
| 2021 | 6 | 9 |
| 2022 | 7 | 8 |
| 2023 | 6 | 5 |
| 2024 | 5 | 8 |
| 2025 | 2 | 2 |
| 2026 | 4 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Photosensitive ring oscillator preparation method and artificial retina thereof25 Aug 2026US 12,719,455 B2
- Double-gate carbon nanotube transistor30 Jun 2026US 12,672,480 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Regulated mobile ion synapses26 May 2026US 12,641,855 B2International Business Machines Corporation
- Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor24 Mar 2026US 12,588,348 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thin film structure including dielectric material layer and electronic device employing the same5 Aug 2025US 12,382,644 B2Samsung Electronics Co., Ltd.
- Double-gate carbon nanotube transistor1 Oct 2026US 2026/0305155 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Photosensitive ring oscillator preparation method and artificial retina thereof20 Nov 2025US 2025/0357918 A1Institute of Physics, Chinese Academy of Sciences
- Semiconductor device and method for manufacturing the semiconductor device28 Aug 2025US 2025/0275183 A1Semiconductor Energy Laboratory Co.Ltd.
- Methods of Manufacturing a Field Effect Transistor Using Carbon Nanotubes and Field Effect Transistors12 Dec 2024US 2024/0414927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of Manufacturing Semiconductor Devices Including The Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, and/or Removing Spacers that Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric and/or Gate Electrode to the Nanotubes28 Nov 2024US 2024/0390861 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric145US 5,946,551 A1999
- Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages106US 6,344,662 B12002
- Thin-film field-effect transistor with organic semiconductor requiring low operating voltages101US 5,981,970 AInternational Business Machines Corporation · 1999
- Low temperature thin film transistor fabrication86US 6,207,472 B1International Business Machines Corporation · 2001
- Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications68US 7,544,967 B2Massachusetts Institute of Technology · 2009