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US 12,382,644 B2Granted
Thin film structure including dielectric material layer and electronic device employing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTaehwan Moon, Jinseong Heo, Sangwook Kim, Yunseong Lee
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Abstract
Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.
Claims4
An electronic device comprising:
- a base layer;
- and
- a thin film structure on the base layer, the thin film structure including
- a first material layer,
- a dielectric material layer having ferroelectricity on the first material layer, the dielectric material layer including a matrix material having a fluorite structure and a dopant, a ratio of a concentration mean to a concentration standard deviation of the dopant in a thickness direction of the dielectric material layer is 8 or greater, and a thickness uniformity of the dielectric material layer is 90% or greater, and
- a second material layer on the dielectric material layer,
- wherein at least one of the first material layer and the second material layer includes a conductive layer.
4 more elements
Dependencies are inferred from the claim text.